Product Material:
Aluminum Nitride (AlN) Ceramic
Material Characteristics:
High thermal conductivity for rapid heat dissipation, excellent electrical insulation, low thermal expansion matching semiconductor materials, high temperature stability up to 1800℃, strong chemical inertness, smooth surface suitable for precision vacuum adsorption
Application Fields:
High-temperature electronic component gripping, semiconductor manufacturing vacuum holding, LED chip and power module positioning, precision microelectronic workpiece clamping
Application Industries:
Semiconductor manufacturing, LED lighting and packaging, power electronics, aerospace electronics, precision machinery and microelectronic systems
Delivery Period:
Standard specifications: 15–25 days, customized specifications: 20–35 days
The insulating and thermally conductive vacuum chuck made from high-purity aluminum nitride ceramic offers precise microelectronic positioning. Ideal for industrial applications requiring reliable heat dissipation and electrical insulation with customizable options from an experienced aluminum nitride ceramic manufacturer.
The high thermal conductivity AlN ceramic vacuum chuck is a precision vacuum-holding component made from high-purity aluminum nitride ceramic. It is designed for stable gripping and accurate positioning of semiconductor wafers, LED chips, power modules, and other microelectronic workpieces. By combining efficient heat dissipation, electrical insulation, low thermal expansion, and a precision-finished surface, it helps reduce thermal stress and maintain process stability in demanding semiconductor manufacturing environments.
Key Features:
| Parameter | Technical Indicator | Remarks |
|---|---|---|
| Material | Aluminum Nitride (AlN) | High-purity electronic ceramic |
| Thermal Conductivity | 170–200 W/(m·K) | Rapid heat dissipation / uniformity |
| Surface Flatness | ≤ 2.0 μm | Ultra-precision grinding |
| Parallelism | ≤ 5.0 μm | Across the entire diameter |
| Surface Roughness (Ra) | ≤ 0.1 μm | Mirror-like finish available |
| Insulation Resistance | ≥ 10¹³ Ω·cm | Excellent dielectric isolation |
| Max Working Temp. | Up to 1000°C | Stable in vacuum / inert gas |
| Coefficient of Thermal Expansion (CTE) | 4.4–4.8 × 10⁻⁶/K | Closely matches Silicon (Si) |
| Vacuum Leak Rate | < 1 × 10⁻⁹ Pa·m³/s | High vacuum compatibility |