Product Name: Silicon Carbide Ceramic Wafer Support Tray
Product Material: High-Purity Silicon Carbide Ceramic (SiC ≥99.9%)
Material Characteristics:
High thermal conductivity, Excellent thermal shock resistance, Outstanding chemical inertness, High mechanical strength, Low thermal expansion, Superior wear resistance
Application Fields:
Semiconductor wafer processing, High-temperature thermal processing, Chemical vapor deposition systems, Diffusion furnace applications
Application Industries:
Semiconductor manufacturing, LED production, Solar cell manufacturing, Power device packaging
Processing Difficulties:
Large-area thin-wall structure fabrication, Warpage control during high-temperature sintering, Precise flatness maintenance, Surface contamination prevention, Micro-crack avoidance in brittle material, Dimensional stability assurance
Processing Flow:
Powder preparation → Slurry process → Tape casting → Lamination → Sintering → CNC machining → Surface polishing → Quality inspection → Ultrasonic cleaning → Packaging
Delivery Period:
35-45 days
Product Description:
The Silicon Carbide Ceramic Wafer Support Tray is precision-engineered for semiconductor wafer handling in extreme processing environments. Its exceptional thermal and mechanical properties ensure reliable performance in high-temperature applications while maintaining wafer integrity and minimizing contamination risks.
Key Features:
Exceptional Thermal Stability - Maintains dimensional accuracy at 1600°C with minimal thermal expansion
Superior Chemical Resistance - Withstands corrosive process gases and aggressive cleaning agents
High Mechanical Reliability - Supports multiple wafers with excellent strength-to-weight ratio
Precision Surface Quality - Ultra-smooth surface (Ra <0.2μm) prevents particle generation
Long Service Life - Resists thermal shock and maintains performance through numerous process cycles
